Trimethylsilane

Trimethylsilane
Names
Preferred IUPAC name
Trimethylsilane
Identifiers
CAS Number
  • 993-07-7 checkY
3D model (JSmol)
  • Interactive image
ChemSpider
  • 63614
ECHA InfoCard 100.012.366 Edit this at Wikidata
EC Number
  • 213-603-0
PubChem CID
  • 70435
UNII
  • 9L70DJH2K0 checkY
CompTox Dashboard (EPA)
  • DTXSID60870822 Edit this at Wikidata
  • C[SiH](C)C
Properties
Chemical formula
 C3H10Si
Molar mass 74.198 g·mol−1
Density 0.638 g cm−3
Melting point −135.9 °C (−212.6 °F; 137.2 K)
Boiling point 6.7 °C (44.1 °F; 279.8 K)
Hazards
GHS labelling:
Pictograms
 GHS02: FlammableGHS04: Compressed GasGHS07: Exclamation mark
Danger
Hazard statements
 H220, H224, H280, H315, H319, H335
Precautionary statements
 P210, P233, P240, P241, P242, P243, P261, P264, P271, P280, P302+P352, P303+P361+P353, P304+P340, P305+P351+P338, P312, P321, P332+P313, P337+P313, P362, P370+P378, P377, P381, P403, P403+P233, P403+P235, P405, P410+P403, P501
NFPA 704 (fire diamond)
NFPA 704 four-colored diamondHealth 2: Intense or continued but not chronic exposure could cause temporary incapacitation or possible residual injury. E.g. chloroformFlammability 4: Will rapidly or completely vaporize at normal atmospheric pressure and temperature, or is readily dispersed in air and will burn readily. Flash point below 23 °C (73 °F). E.g. propaneInstability 1: Normally stable, but can become unstable at elevated temperatures and pressures. E.g. calciumSpecial hazards (white): no code
2
4
1
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
Infobox references
Chemical compound

Trimethylsilane is the organosilicon compound with the formula (CH3)3SiH. It is a trialkylsilane. The Si-H bond is reactive. It is less commonly used as a reagent than the related triethylsilane, which is a liquid at room temperature.

Trimethylsilane is used in the semiconductor industry as precursor to deposit dielectrics and barrier layers via plasma-enhanced chemical vapor deposition (PE-CVD).[1] It is also used a source gas to deposit TiSiCN hard coatings via plasma-enhanced magnetron sputtering (PEMS). It has also been used to deposit silicon carbide hard coatings via low-pressure chemical vapor deposition (LP-CVD) at relatively low temperatures under 1000 °C. It is an expensive gas but safer to use than silane (SiH4); and produces properties in the coatings that cannot be undertaken by multiple source gases containing silicon and carbon.

See also

References

  1. ^ Chen, Sheng-Wen; Wang, Yu-Sheng; Hu, Shao-Yu; Lee, Wen-Hsi; Chi, Chieh-Cheng; Wang, Ying-Lang (2012). "A Study of Trimethylsilane (3MS) and Tetramethylsilane (4MS) Based α-SiCN:H/α-SiCO:H Diffusion Barrier Films". Materials. 5 (3): 377–384. Bibcode:2012Mate....5..377C. doi:10.3390/ma5030377. PMC 5448926. PMID 28817052.